Proposal and analysis of a ferromagnetic triple-barrier resonant-tunneling spin filter

Author

Uemura, Toshifumi ; Marukame, T. ; Yamamoto, M.

Author_Institution

Div. of Electron. & Inf. Eng., Hokkaido Univ., Sapporo, Japan

fYear

2003

fDate

March 30 2003-April 3 2003

Abstract

In this paper, a new type of spin filter that uses a triple-barrier structure was proposed. The proposed device consists of a non-magnetic and a ferromagnet QW. The inherent peaked I-V characteristics in the triple barrier resonant structure result in a distinct peak separation of the up-spin and the down-spin components regarding the bias voltage, which leads to an exceedingly high spin polarization. The spin dependent tunneling current and the tunnel-barrier-width dependence of both the spin polarization and the current density were theoretically calculated.

Keywords

III-V semiconductors; aluminium compounds; current density; ferromagnetic materials; gallium arsenide; magnetic semiconductors; magnetic tunnelling; manganese compounds; quantum well devices; resonant tunnelling transistors; resonator filters; semiconductor device models; spin polarised transport; GaMnAs-AlAs-GaAs; I-V characteristics; current density; down-spin components; ferromagnet QW; ferromagnetic triple-barrier resonant-tunneling spin filter; nonmagnetic QW; spin dependent tunneling current; spin polarization; triple barrier resonant structure; up-spin components; Current density; Filters; Gallium arsenide; Magnetic analysis; Magnetic resonance; Magnetic separation; Polarization; Proposals; Resonant tunneling devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2003. INTERMAG 2003. IEEE International

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7647-1

Type

conf

DOI

10.1109/INTMAG.2003.1230805

Filename

1230805