The Effects of the Complexing Agents on the Growth and Properties of Modified Chemical-bath-deposited ZnS Thin Films

Author

Chen, Liangyan ; Zhang, Daoli ; Chen, Qian

Author_Institution

Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan

fYear

2006

fDate

18-21 Jan. 2006

Firstpage

599

Lastpage

602

Abstract

ZnS thin films were obtained with modified chemical bath deposition (CBD). The parameters which concern the growth and properties of the films including the concentration of the sources, pH value of the solution, the deposition temperature were optimized. A variety of complexing agents were employed, which played important roles in the formation of the thin films. The microstructure and the optical transmission spectrum of the films were presented with a variety of jointly used complexing agents. X-ray diffraction patterns indicated that the annealed samples are microcrystalline with a sphalerite structure. The band gap of the annealed films is about 3.1eV. The effects of complexing agents on the deposition of the films were discussed

Keywords

II-VI semiconductors; X-ray diffraction; annealing; crystal microstructure; energy gap; light transmission; liquid phase deposition; pH; semiconductor thin films; wide band gap semiconductors; zinc compounds; CBD technique; X-ray diffraction; ZnS; annealing; band gap; chemical bath deposition; complexing agents; microstructure; optical transmission; pH; sphalerite structure; thin films; Annealing; Chemicals; Microstructure; Optical diffraction; Optical films; Sputtering; Temperature; Transistors; X-ray diffraction; Zinc compounds; Modified CBD; ZnS thin films; complexing agents; optical band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on

Conference_Location

Zhuhai

Print_ISBN

1-4244-0139-9

Electronic_ISBN

1-4244-0140-2

Type

conf

DOI

10.1109/NEMS.2006.334853

Filename

4135026