Title :
The Effects of the Complexing Agents on the Growth and Properties of Modified Chemical-bath-deposited ZnS Thin Films
Author :
Chen, Liangyan ; Zhang, Daoli ; Chen, Qian
Author_Institution :
Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan
Abstract :
ZnS thin films were obtained with modified chemical bath deposition (CBD). The parameters which concern the growth and properties of the films including the concentration of the sources, pH value of the solution, the deposition temperature were optimized. A variety of complexing agents were employed, which played important roles in the formation of the thin films. The microstructure and the optical transmission spectrum of the films were presented with a variety of jointly used complexing agents. X-ray diffraction patterns indicated that the annealed samples are microcrystalline with a sphalerite structure. The band gap of the annealed films is about 3.1eV. The effects of complexing agents on the deposition of the films were discussed
Keywords :
II-VI semiconductors; X-ray diffraction; annealing; crystal microstructure; energy gap; light transmission; liquid phase deposition; pH; semiconductor thin films; wide band gap semiconductors; zinc compounds; CBD technique; X-ray diffraction; ZnS; annealing; band gap; chemical bath deposition; complexing agents; microstructure; optical transmission; pH; sphalerite structure; thin films; Annealing; Chemicals; Microstructure; Optical diffraction; Optical films; Sputtering; Temperature; Transistors; X-ray diffraction; Zinc compounds; Modified CBD; ZnS thin films; complexing agents; optical band gap;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on
Conference_Location :
Zhuhai
Print_ISBN :
1-4244-0139-9
Electronic_ISBN :
1-4244-0140-2
DOI :
10.1109/NEMS.2006.334853
