Title :
Spin dependent tunneling junctions with ferromagnetic triple-barrier resonant-tunneling spin filter
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, spin dependent tunneling junctions with SPM sensing layer have been made using standard microelectronic fabrication techniques. The SPM-SDT junction have zero hysteresis without biasing and a reasonable sensitivity. A typical SDT junction has a vertical structure of Si(100)-Si/sub 3/N/sub 4/-Ru-NiFeCo-Al/sub 2/O/sub 3/-FeCo-CrMnPt.
Keywords :
alumina; chromium alloys; cobalt alloys; ferromagnetic materials; iron alloys; magnetic sensors; magnetic tunnelling; manganese alloys; nickel alloys; paramagnetic materials; platinum alloys; resonator filters; ruthenium; sensitivity; silicon; silicon compounds; sputter deposition; superparamagnetism; thin films; Si-Si/sub 3/N/sub 4/-Ru-NiFeCo-Al/sub 2/O/sub 3/-FeCo-CrMnPt; ferromagnetic triple-barrier resonant-tunneling spin filter; microelectronic fabrication; sensitivity; spin dependent tunneling junctions; superparamagnetic sensing layer; Biomedical measurements; Filters; Magnetic field measurement; Magnetic materials; Magnetic recording; Magnetic separation; Random media; Resonant tunneling devices; Scanning probe microscopy; Solid state circuits;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230806
