• DocumentCode
    2054930
  • Title

    Synthesis of ZnO nanowire with dope of phosphorus by NAPLD and its characteristic evaluation

  • Author

    Kumeda, Akio ; Toya, K. ; Kubo, K. ; Tsuta, K. ; Higashihata, M. ; Nakamura, D. ; Okada, T. ; CAO, Bingqiang ; Sakai, Kentaro

  • Author_Institution
    Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
  • fYear
    2010
  • fDate
    21-24 Nov. 2010
  • Firstpage
    446
  • Lastpage
    448
  • Abstract
    Phosphorus doped ZnO (ZnO:P) nanowires have been successfully grown on the annealed c-cut sapphire substrate using catalyst-free nanoparticle-assisted pulsed-laser deposition, and characteristics of the nanowires was evaluated. A sintered ZnO target doped with P2O5 was used for synthesis the ZnO:P nanowires.
  • Keywords
    II-VI semiconductors; nanofabrication; nanowires; phosphorus; pulsed laser deposition; semiconductor growth; sintering; wide band gap semiconductors; zinc compounds; Al2O3; ZnO:P; annealed c-cut sapphire substrate; catalyst-free nanoparticle-assisted pulsed-laser deposition; phosphorus doped nanowires; sintering; ZnO; nanowire; p-n junction; phosphorus; pulsed-laser deposition;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    TENCON 2010 - 2010 IEEE Region 10 Conference
  • Conference_Location
    Fukuoka
  • ISSN
    pending
  • Print_ISBN
    978-1-4244-6889-8
  • Type

    conf

  • DOI
    10.1109/TENCON.2010.5686692
  • Filename
    5686692
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2054930