Spin dependent transport phenomena in the NiFe/AlO/Cu/AlO/NiFe double tunnel junctions

Author

Hayakawa, J. ; Itou, K. ; Ichimura, M. ; Sakuma, A.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

2003

fDate

March 30 2003-April 3 2003

Abstract

In this study, in order to develop the highly performable spintronics devices such as three terminal spin devices, we first began to examine the fundamental spin transport properties in the spin-valve type NiFe/AlO/Cu/NiFe/MnIr double junctions, which has never been studied experimentally so far. The samples were grown on SiO/sub 2/ substrate by magnetron sputtering method. Magnetoresistance effects in the NiFe/AlO/Cu/NiFe/MnIr double junctions was studied at 4.2 K and room temperature.

Keywords

aluminium compounds; copper; iridium alloys; iron alloys; magnetic thin film devices; magnetic thin films; manganese alloys; nickel alloys; spin polarised transport; spin valves; sputtered coatings; tunnelling magnetoresistance; 293 to 298 K; 4.2 K; NiFe-AlO-Cu-NiFe-MnIr; SiO/sub 2/ substrate; magnetoresistance effects; magnetron sputtering; room temperature; spin transport properties; spin-valve type NiFe/AlO/Cu/AlO/NiFe double tunnel junctions; Artificial intelligence; Atmosphere; Large Hadron Collider; Magnetic devices; Magnetic fields; Magnetic switching; Magnetoelectronics; Physics; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2003. INTERMAG 2003. IEEE International

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7647-1

Type

conf

DOI

10.1109/INTMAG.2003.1230810

Filename

1230810