Magnetoresistance modulation in single-electron transistors

Author

Jalil, M.B.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

fYear

2003

fDate

March 30 2003-April 3 2003

Abstract

In this paper, we model the current and magnetoresistance of a single electron transistor (SET), consisting of an island, separated by thin tunnel barriers from two ferromagnetic electrodes. By using the gate V/sub g/ or source-drain V/sub ds/ bias, the MR of the SET can be modulated externally, the degree of which depends on junction symmetry, non-equilibrium spin accumulation and higher order cotunneling.

Keywords

cobalt alloys; ferromagnetic materials; iron alloys; single electron transistors; tunnelling magnetoresistance; Fe-Co-Fe; ferromagnetic electrodes; junction symmetry; magnetoresistance modulation; nonequilibrium spin accumulation; single-electron transistors; thin tunnel barriers; Electrodes; Equations; Laboratories; Magnetic materials; Magnetic modulators; Magnetoresistance; Material storage; Polarization; Single electron transistors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2003. INTERMAG 2003. IEEE International

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7647-1

Type

conf

DOI

10.1109/INTMAG.2003.1230811

Filename

1230811

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2055029