Title :
Magnetoresistance modulation in single-electron transistors
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we model the current and magnetoresistance of a single electron transistor (SET), consisting of an island, separated by thin tunnel barriers from two ferromagnetic electrodes. By using the gate V/sub g/ or source-drain V/sub ds/ bias, the MR of the SET can be modulated externally, the degree of which depends on junction symmetry, non-equilibrium spin accumulation and higher order cotunneling.
Keywords :
cobalt alloys; ferromagnetic materials; iron alloys; single electron transistors; tunnelling magnetoresistance; Fe-Co-Fe; ferromagnetic electrodes; junction symmetry; magnetoresistance modulation; nonequilibrium spin accumulation; single-electron transistors; thin tunnel barriers; Electrodes; Equations; Laboratories; Magnetic materials; Magnetic modulators; Magnetoresistance; Material storage; Polarization; Single electron transistors; Tunneling;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230811
