A 3-port MEMS switch for MEMS phase shifter application

Author

Jian, Zhu ; Yuanwei, Yu ; Le, Lu ; Chen, Chen ; Yong, Zhang ; Naibin, Yang

Author_Institution

Nanjing Electron. Devices Inst.

fYear

2006

fDate

18-21 Jan. 2006

Firstpage

611

Lastpage

614

Abstract

A 3-port MEMS switch for MEMS phase shifter is present, with bias electrodes physically insulated from RF/microwave transmission line, which are designed for lower crosstalk between bias and microwave signal. The RF/microwave performances of these switches are optimized by 2.5 dimension electromagnetic (EM) field-solvers of ADS/Momentum. The mechanical structure of the switch is optimized by electromechanical coupling analysis of Intellisuitereg software. The insert loss of the switch is 0.66dB@10GHz and the isolation is 23.26dB@10GHz. The delay of on-state is about 50mus (90% bias) and that of off-state is about 15mus (10% bias). The whole chip size of the switch is 800mum*1000mum which made the MEMS phase shifter much more compact

Keywords

microswitches; microwave phase shifters; microwave switches; 0.66 dB; 10 GHz; 3-port MEMS switch; Intellisuitereg software; RF transmission; bias electrodes; electromagnetic field; electromechanical coupling; mechanical structure; microwave transmission; phase shifter; Crosstalk; Electrodes; Insulation; Micromechanical devices; Microswitches; Phase shifters; Radio frequency; Signal design; Switches; Transmission lines; EM field; MEMS switch; electromechanical coupling; physically insulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on

Conference_Location

Zhuhai

Print_ISBN

1-4244-0139-9

Electronic_ISBN

1-4244-0140-2

Type

conf

DOI

10.1109/NEMS.2006.334856

Filename

4135029