DocumentCode :
2055090
Title :
Mg AlO/sub x/ barriers for low-resistance tunnel-valve sensors
Author :
Childress, J.R. ; Ho, M. ; Fontana, Robert E. ; Schwickert, M.M. ; Ju, Y.S. ; Gurney, B.A.
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
fYear :
2003
fDate :
March 30 2003-April 3 2003
Abstract :
In this work, to achieve practical tunnel-valve sensors for recording, the specific junction resistance of the tunnel barrier must be reduced.
Keywords :
aluminium compounds; magnesium compounds; magnetic recording; magnetic sensors; magnetic thin films; spin valves; tunnelling magnetoresistance; Mg AlO/sub x/ barriers; MgAlO/sub x/; junction resistance; low-resistance tunnel-valve sensors; recording; tunnel barrier; Artificial intelligence; Couplings; Displays; Magnetic sensors; Oxidation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
Type :
conf
DOI :
10.1109/INTMAG.2003.1230812
Filename :
1230812
Link To Document :
بازگشت