DocumentCode
2055090
Title
Mg AlO/sub x/ barriers for low-resistance tunnel-valve sensors
Author
Childress, J.R. ; Ho, M. ; Fontana, Robert E. ; Schwickert, M.M. ; Ju, Y.S. ; Gurney, B.A.
Author_Institution
IBM Almaden Res. Center, San Jose, CA, USA
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this work, to achieve practical tunnel-valve sensors for recording, the specific junction resistance of the tunnel barrier must be reduced.
Keywords
aluminium compounds; magnesium compounds; magnetic recording; magnetic sensors; magnetic thin films; spin valves; tunnelling magnetoresistance; Mg AlO/sub x/ barriers; MgAlO/sub x/; junction resistance; low-resistance tunnel-valve sensors; recording; tunnel barrier; Artificial intelligence; Couplings; Displays; Magnetic sensors; Oxidation;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230812
Filename
1230812
Link To Document