Title :
Temperature and bias voltage dependence of CoFe/AlO/sub x//Py/AlO/sub x//CoFe double barrier junctions
Author :
Thomas, Abu ; Bruckl, H. ; Schmalhorst, J. ; Reiss, G.
Author_Institution :
Dept. of Phys., Bielefeld Univ., Germany
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we compare the transport properties and temperature dependence of DBJs and single barrier junctions (SBJ). The results are discussed within a serial resistor model of the two single junctions. Ballistic and diffusive contributions to the tunneling current can be estimated, then.
Keywords :
aluminium compounds; ballistic transport; cobalt alloys; iron alloys; magnetic tunnelling; resistors; CoFe-AlO/sub x/-AlO/sub x/-CoFe; CoFe/AlO/sub x//Py/AlO/sub x//CoFe double barrier junctions; ballistic transport; bias voltage dependence; serial resistor model; single barrier junctions; temperature dependence; transport properties; tunneling current; Temperature dependence; Voltage;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230813
