DocumentCode :
2055152
Title :
Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge
Author :
Uchida, Giichiro ; Nunomutra, Shota ; Miyata, Hiroshi ; Iwashita, Shinya ; Yamashita, Dsaisuke ; Matsuzaki, Hidefumi ; Kamataki, Kunihiro ; Itagaki, Naho ; Koga, Kazunori ; Shiratani, Masaharu
Author_Institution :
Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
fYear :
2010
fDate :
21-24 Nov. 2010
Firstpage :
2199
Lastpage :
2201
Abstract :
We present detailed measurements on breakdown voltage (Vf) in a RF discharge with Si(CH3)2(OCH3)2 gas diluted with Ar. When Ar concentration (PAr) is increased, the Vf gradually decreases up to PAr = 50 %, and then is followed by a drastic decrease. The PAr dependence of Vf is well explained by a feature of the ion-induced secondary electron emission coefficient (γ) deduced from measured Paschen curves. A drastic increase in Ar ion flux with PAr induces high emission of electrons from cathode surface, resulting in lowing Vf.
Keywords :
argon; cathodes; high-frequency discharges; organic compounds; secondary electron emission; Ar; Paschen curves; RF discharge; breakdown voltage; cathode; ion flux; ion-induced secondary electron emission coefficient; Paschen curve; Si(CH3)2(OCH3)2 RF discharge; electrical breakdown; ion-induced secondary electron emission coefficient;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location :
Fukuoka
ISSN :
pending
Print_ISBN :
978-1-4244-6889-8
Type :
conf
DOI :
10.1109/TENCON.2010.5686704
Filename :
5686704
Link To Document :
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