Effects of Ar addition on breakdown voltage in a Si(CH3)2(OCH3)2 RF discharge

Author

Uchida, Giichiro ; Nunomutra, Shota ; Miyata, Hiroshi ; Iwashita, Shinya ; Yamashita, Dsaisuke ; Matsuzaki, Hidefumi ; Kamataki, Kunihiro ; Itagaki, Naho ; Koga, Kazunori ; Shiratani, Masaharu

Author_Institution

Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan

fYear

2010

fDate

21-24 Nov. 2010

Firstpage

2199

Lastpage

2201

Abstract

We present detailed measurements on breakdown voltage (V_f) in a RF discharge with Si(CH₃)₂(OCH₃)₂ gas diluted with Ar. When Ar concentration (P_Ar) is increased, the V_f gradually decreases up to P_Ar = 50 %, and then is followed by a drastic decrease. The P_Ar dependence of V_f is well explained by a feature of the ion-induced secondary electron emission coefficient (γ) deduced from measured Paschen curves. A drastic increase in Ar ion flux with P_Ar induces high emission of electrons from cathode surface, resulting in lowing V_f.

Keywords

argon; cathodes; high-frequency discharges; organic compounds; secondary electron emission; Ar; Paschen curves; RF discharge; breakdown voltage; cathode; ion flux; ion-induced secondary electron emission coefficient; Paschen curve; Si(CH3)2(OCH3)2 RF discharge; electrical breakdown; ion-induced secondary electron emission coefficient;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2010 - 2010 IEEE Region 10 Conference

Conference_Location

Fukuoka

ISSN

pending

Print_ISBN

978-1-4244-6889-8

Type

conf

DOI

10.1109/TENCON.2010.5686704

Filename

5686704