Title :
Simulation of the influence of grain structure of heteroepitaxial nitrides layers on the performance of MSM detector
Author :
Szyszka, Adam ; Paszkiewicz, Bogdan ; Paszkiewicz, Regina ; Tlaczala, Marek
Author_Institution :
Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Warsaw
Abstract :
The influence of potential barriers formed at grain boundaries in heteroepitaxial nitrides layers on MSM (metal-semiconductor-metal) detector performance was simulated. Three types of structures: without deep traps, with point deep traps and with deep traps located in grain boundary (GB) were examined and compared. The time response characteristics of structures have been characterized.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; grain boundaries; metal-semiconductor-metal structures; metallic epitaxial layers; semiconductor epitaxial layers; ultraviolet detectors; AlGaN; MSM detector; deep traps; grain boundaries; grain structure; heteroepitaxial nitrides layers; metal-semiconductor-metal detector; potential barriers; Aluminum gallium nitride; Detectors; Electrodes; Electron traps; Epitaxial growth; Epitaxial layers; Grain boundaries; Optical polarization; Photoconductivity; Photonics;
Conference_Titel :
Photonics and Microsystems, 2007 International Students and Young Scientists Workshop on
Conference_Location :
Dresden
Print_ISBN :
978-1-4244-1313-3
Electronic_ISBN :
978-1-4244-1314-0
DOI :
10.1109/STYSW.2007.4559130
