DocumentCode
2055888
Title
A numerical and experimental study of temperature cycle wire bond failure
Author
Chidambaram, N.V.
Author_Institution
Cypress Semicond., San Jose, CA, USA
fYear
1991
fDate
11-16 May 1991
Firstpage
877
Lastpage
882
Abstract
Temperature cycle data in conjunction with the strains obtained from finite-element analysis has been used to evaluate gold wire fatigue parameters and the mean time to failure for different silicon device sizes. The objective of this study was to develop a numerical procedure to simulate reliability testing results. Such simulations can significantly improve engineering efficiency and reduce package development cycle times. The number of cycles to 1.3% failure point was obtained for different die sizes
Keywords
circuit reliability; failure analysis; finite element analysis; gold; lead bonding; packaging; Au; finite-element analysis; mean time to failure; numerical procedure; package development cycle times; strains; temperature cycle; wire bond failure; wire fatigue parameters; Bonding; Capacitive sensors; Failure analysis; Fatigue; Finite element methods; Gold; Numerical simulation; Silicon devices; Temperature; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 1991. Proceedings., 41st
Conference_Location
Atlanta, GA
Print_ISBN
0-7803-0012-2
Type
conf
DOI
10.1109/ECTC.1991.163982
Filename
163982
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