DocumentCode :
2055888
Title :
A numerical and experimental study of temperature cycle wire bond failure
Author :
Chidambaram, N.V.
Author_Institution :
Cypress Semicond., San Jose, CA, USA
fYear :
1991
fDate :
11-16 May 1991
Firstpage :
877
Lastpage :
882
Abstract :
Temperature cycle data in conjunction with the strains obtained from finite-element analysis has been used to evaluate gold wire fatigue parameters and the mean time to failure for different silicon device sizes. The objective of this study was to develop a numerical procedure to simulate reliability testing results. Such simulations can significantly improve engineering efficiency and reduce package development cycle times. The number of cycles to 1.3% failure point was obtained for different die sizes
Keywords :
circuit reliability; failure analysis; finite element analysis; gold; lead bonding; packaging; Au; finite-element analysis; mean time to failure; numerical procedure; package development cycle times; strains; temperature cycle; wire bond failure; wire fatigue parameters; Bonding; Capacitive sensors; Failure analysis; Fatigue; Finite element methods; Gold; Numerical simulation; Silicon devices; Temperature; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 1991. Proceedings., 41st
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-0012-2
Type :
conf
DOI :
10.1109/ECTC.1991.163982
Filename :
163982
Link To Document :
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