Title :
Progress on InGaAs/GaAsSb based terahertz quantum cascade lasers
Author :
Deutsch, C. ; Detz, H. ; Benz, A. ; Nobile, M. ; Andrews, A.M. ; Klang, P. ; Schrenk, W. ; Strasser, G. ; Unterrainer, K.
Author_Institution :
Photonics Inst. & Center for Micro- & Nanostruct., Vienna Univ. of Technol., Vienna, Austria
Abstract :
In this contribution we present the second generation of InGaAs/GaAsSb THz QCLs operating up to 135 K. The active region design was slightly revised and is based on a three-well phonon depletion scheme. Compared to first devices the threshold current density could be reduced from 2 kA/cm2 to 0.75 kA/cm2 and a broad spectral range of lasing modes between 3.3-4.0 THz is observed.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser modes; quantum cascade lasers; submillimetre wave lasers; InGaAs-GaAsSb; active region design; current density; frequency 3.3 THz to 4.0 THz; lasing modes; terahertz quantum cascade lasers; three-well phonon depletion scheme; Indium gallium arsenide; Indium phosphide; Nanostructures; Photonics; Quantum cascade lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5942516
