Progress on InGaAs/GaAsSb based terahertz quantum cascade lasers

Author

Deutsch, C. ; Detz, H. ; Benz, A. ; Nobile, M. ; Andrews, A.M. ; Klang, P. ; Schrenk, W. ; Strasser, G. ; Unterrainer, K.

Author_Institution

Photonics Inst. & Center for Micro- & Nanostruct., Vienna Univ. of Technol., Vienna, Austria

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

In this contribution we present the second generation of InGaAs/GaAsSb THz QCLs operating up to 135 K. The active region design was slightly revised and is based on a three-well phonon depletion scheme. Compared to first devices the threshold current density could be reduced from 2 kA/cm² to 0.75 kA/cm² and a broad spectral range of lasing modes between 3.3-4.0 THz is observed.

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; laser modes; quantum cascade lasers; submillimetre wave lasers; InGaAs-GaAsSb; active region design; current density; frequency 3.3 THz to 4.0 THz; lasing modes; terahertz quantum cascade lasers; three-well phonon depletion scheme; Indium gallium arsenide; Indium phosphide; Nanostructures; Photonics; Quantum cascade lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5942516

Filename

5942516