DocumentCode :
2056055
Title :
Surge current capability of IGBTs
Author :
Basler, Thomas ; Lutz, Josef ; Jakob, Roland ; Brückner, Thomas
Author_Institution :
Dept. of Power Electron. & EMC, Chemnitz Univ. of Technol., Chemnitz, Germany
fYear :
2012
fDate :
20-23 March 2012
Firstpage :
1
Lastpage :
6
Abstract :
Commonly an IGBT cannot withstand a surge-current pulse (large overcurrent with a duration of some milliseconds) due to the current saturation characteristic of this device. In the case of a converter´s single device failure the IGBT switches are driven into pulse-blocking mode to prevent a DC-link short-circuit and subsequent IGBT failures. This strategy leads to an asymmetric short circuit of the load. The paper introduces the possibility to symmetrize the load short circuit with active turned on IGBTs and shows first measurements on high-voltage press-pack IGBT chips under heavy overcurrent condition with increased gate voltage.
Keywords :
high-voltage engineering; overcurrent protection; power convertors; power semiconductor switches; short-circuit currents; surge protection; DC-link short-circuit prevention; IGBT failure; IGBT switches; asymmetric load short circuit; converter single device failure; current saturation characteristic; gate voltage; heavy overcurrent condition; high-voltage press-pack IGBT chips measurement; pulse-blocking mode; surge-current pulse capability; Current measurement; Insulated gate bipolar transistors; Logic gates; Semiconductor device measurement; Temperature; Temperature measurement; Voltage measurement; IGBT; Surge-Current Robustness; Voltage Controlled Device;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Systems, Signals and Devices (SSD), 2012 9th International Multi-Conference on
Conference_Location :
Chemnitz
Print_ISBN :
978-1-4673-1590-6
Electronic_ISBN :
978-1-4673-1589-0
Type :
conf
DOI :
10.1109/SSD.2012.6198072
Filename :
6198072
Link To Document :
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