Influence of niobium dopant on the photoelectrochemical performance and photochargeability of SrTiO3 films

SrTi_1-xNb_xO₃ films with thickness of about 200 nm on nickel substrate were deposited by magnetron sputtering method. After annealed at 500degC, a hydrogen storage alloy was deposited on the back of the nickel substrate and the SrTi_1-xNb_xO₃/Ni/hydrogen storage alloy (SNH) electrodes were fabricated. The influences of niobium dopant on the photoelectrochemical performance of SrTiO₃ thin films and on the photo-chargeability of SNH electrodes were investigated. With the increase of the niobium content from 0.5 mol.% to 2 mol.% in the SrTiO₃ films, the photocurrents, the open-circuit photovoltage of the SrTiO₃ thin films and the photochargeability of the SNH electrode increased.