Title :
Direct modulation of bistable semiconductor ring lasers
Author :
Cai, X. ; Mezosi, G. ; Wang, Z. ; Jiang, P. ; Memon, M.I. ; Sorel, M. ; Chi, N. ; Yu, S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Bristol, Bristol, UK
Abstract :
We report the direct modulation of SRL at bit rates up to 1.5Gb/s. The experimental results show that the DC bias current is the key factor for direct modulation. The devices were fabricated on a multiquantum-well(QW) InAlGaAs-InP wafer structure with a gain region consisting of five 6-nm compressively strained Al0.07Ga0.22In0.71As wells and six 10-nm slightly tensile strained barriers.
Keywords :
laser stability; optical bistability; optical fabrication; optical modulation; ring lasers; semiconductor lasers; DC bias current; InAlGaAs-InP; bistable semiconductor ring lasers; direct modulation; gain region; multiquantum well; wafer structure; Bit error rate; Bit rate; Modulation; Optical bistability; Ring lasers; Semiconductor lasers; Signal analysis;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5942556
