DocumentCode
2057097
Title
High speed AlGaInAs electroabsorption modulated laser and its optically equalized operation at 86 Gb/s
Author
Kazmierski, C. ; Jany, C. ; Decobert, J. ; Alexandre, F. ; Blache, F. ; Scavennec, A. ; Winzer, P.J. ; Doerr, C.R. ; Raybon, G. ; Adamiecki, A. ; Johansen, T.
Author_Institution
III-V Lab., Alcatel-Thales, Marcoussis
fYear
2008
fDate
21-25 Sept. 2008
Firstpage
1
Lastpage
2
Abstract
We demonstrate a novel compact AlGaInAs electroabsorption modulated laser at 86 Gb/s including bit-error rate measurements using an optical equalizer.
Keywords
III-V semiconductors; aluminium compounds; electroabsorption; equalisers; error statistics; gallium arsenide; indium compounds; optical modulation; semiconductor lasers; AlGaInAs; bit rate 86 Gbit/s; bit-error rate; electroabsorption modulated laser; high speed laser; optical equalizer; optically equalized operation; Bandwidth; Bit error rate; Equalizers; High speed optical techniques; III-V semiconductor materials; Indium phosphide; Optical design; Optical modulation; Optical transmitters; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication, 2008. ECOC 2008. 34th European Conference on
Conference_Location
Brussels
Print_ISBN
978-1-4244-2227-2
Electronic_ISBN
978-1-4244-2228-9
Type
conf
DOI
10.1109/ECOC.2008.4729343
Filename
4729343
Link To Document