Title :
Realistic Simulation of Reverse Characteristics of 411-SiC Power Diode
Author :
Wei, Guannan ; Liang, Yung C. ; Samudra, Ganesh S.
Author_Institution :
Department of Electrical and Computer Engineering, National University of Singapore, Kent Ridge, Singapore 119260. E-mail: chii@nus.edu.sg
Abstract :
This paper presents a methodology to simulate the reverse characteristics of realistic 4H-SiC pn junctions. The physical bases behind methodology of the simulation have been analyzed. The extensive collection of reported 4H-SiC pn junction diode data formed the basis of calibration of SYNOPSYS MEDICI for 4H-SiC pn junction simulation. Relevant parameters in the trap and photogeneration models are modified for realistic simulations. Motivation and justification of the modifications are presented. A universally applicable model parameter set for simulation of the reverse characteristics of practical 4H-SiC pn junction is proposed and verified against reported independent data not needed in the calibration step.
Keywords :
Calibration; Computational modeling; Computer simulation; Electric breakdown; Fasteners; Medical simulation; Predictive models; Semiconductor diodes; Silicon carbide; Thermal conductivity;
Conference_Titel :
Power Engineering, Energy and Electrical Drives, 2007. POWERENG 2007. International Conference on
Conference_Location :
Setubal, Portugal
Print_ISBN :
978-1-4244-0895-5
Electronic_ISBN :
978-1-4244-0895-5
DOI :
10.1109/POWERENG.2007.4380164
