Title :
Passively mode-locked monolithic two-section gain-guided tapered quan-tum-dot lasers: I. Ultrashort and stable pulse generation
Author :
Drzewietzki, L. ; Ruiz, M. ; Breuer, S. ; Tran, M. ; Robert, Y. ; Rossetti, M. ; Xu, T. ; Bardella, P. ; Elsässer, W. ; Krakowski, M. ; Montrosset, I. ; Krestnikov, I.
Author_Institution :
Inst. fur Angewandte Phys., Tech. Univ. Darmstadt, Darmstadt, Germany
Abstract :
Passively mode-locked monolithic two-section gain-guided tapered quantum-dot lasers is reported along with ultrashort and stable pulse generation.The active region of the laser structure consists of 10 InGaAs QD layers separated by GaAs barriers integrated in a GaAs waveguide. Gain guiding is achieved by ion implantation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; ion implantation; laser mode locking; optical fabrication; optical pulse generation; optical waveguides; quantum dot lasers; GaAs; InGaAs-GaAs; integrated optics; ion implantation; laser structure; optical waveguides; passively mode-locked laser; two-section gain-guided tapered quantum-dot lasers; ultrashort stable pulse generation; Gallium arsenide; Laser beams; Laser mode locking; Laser stability; Pulse generation; Quantum dots; Radio frequency;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5942559
