Title :
100°C, 10 Gbps operation of buried tunnel junction GaInNAs VCSELs
Author :
Onishi, Yutaka ; Saga, Nobuhiro ; Koyama, Kenji ; Doi, Hideyuki ; Ishizuka, Takashi ; Yamada, Takashi ; Fujii, Kosuke ; Mori, Hiroki ; Hashimoto, Junichi ; Shimazu, Mitsuru ; Katsuyama, Tsukuru
Author_Institution :
Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yokohama
Abstract :
10 Gbps operation of BTJ GaInNAs VCSELs is achieved over temperature range of 25degC to 100degC with operation current of 5.6 mA and extinction ratio of 4.2 dB.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; surface emitting lasers; wide band gap semiconductors; GaInNAs; VCSEL; bit rate 10 Gbit/s; buried tunnel junction; current 5.6 mA; extinction ratio; operation current; temperature 100 degC to 25 degC; Apertures; Distributed Bragg reflectors; Gallium arsenide; High speed optical techniques; Mirrors; Optical losses; Optical refraction; Optical variables control; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Communication, 2008. ECOC 2008. 34th European Conference on
Conference_Location :
Brussels
Print_ISBN :
978-1-4244-2227-2
Electronic_ISBN :
978-1-4244-2228-9
DOI :
10.1109/ECOC.2008.4729347
