Comparison of IGCT and IGBT for the use in the modular multilevel converter for HVDC applications

Author

Buschendorf, Martin ; Weber, Jens ; Bernet, Steffen

Author_Institution

Power Electron. Group, Dresden Univ. of Technol., Dresden, Germany

fYear

2012

fDate

20-23 March 2012

Firstpage

1

Lastpage

6

Abstract

This paper describes briefly the modeling of the modular multilevel converter, which was introduced by Rainer Marquardt [1]. The mathematical model is used to calculate the average losses and junction temperature of the semiconductor devices in dependence on the converter output power. The junction temperature, the semiconductor losses and their several components are shown in order to compare a converter with IGCTs and a converter with IGBTs as switches. The comparison is made to show in which operating point the one or the other has its advantages.

Keywords

HVDC power convertors; insulated gate bipolar transistors; HVDC applications; IGBT; IGCT; average losses; converter output power; junction temperature; mathematical model; modular multilevel converter; semiconductor devices; Insulated gate bipolar transistors; Inverters; Junctions; Mathematical model; Semiconductor diodes; Switches; Temperature; IGBT; IGCT; losses; modular multilevel converter;

fLanguage

English

Publisher

ieee

Conference_Titel

Systems, Signals and Devices (SSD), 2012 9th International Multi-Conference on

Conference_Location

Chemnitz

Print_ISBN

978-1-4673-1590-6

Electronic_ISBN

978-1-4673-1589-0

Type

conf

DOI

10.1109/SSD.2012.6198118

Filename

6198118