Title :
Silicon based nano-MOSFET: New materials, new device architectures, and new challenges for device simulation
Author :
Sangiorgi, Enrico
Author_Institution :
ARCES-DEIS, Univ. of Bologna, Cesena
Abstract :
In this paper selected applications of Monte Carlo simulation of semi-classical carrier transport are reviewed, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.
Keywords :
MOSFET; Monte Carlo methods; ballistic transport; nanoelectronics; Monte Carlo simulation; RF characteristics; Si; channel materials; decananometric MOSFET; device architecture; device simulation; quasiballistic transport; semiclassical carrier transport; silicon based nanoMOSFET; Acoustic scattering; Dielectric substrates; MOSFETs; Mie scattering; Nanoscale devices; Nanostructured materials; Optical scattering; Particle scattering; Quantization; Silicon;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559217
