Spatial “rocking” in broad emission area semiconductor lasers

Spatial rocking in broad emission area semiconductor lasers is reported. 3D traveling wave model describing the spatio-temporal evolution of the slowly varying complex field amplitudes, counter-propagating along the longitudinal axis of the laser, the induced complex polarization functions, and the real carrier density function. This model takes into account lateral carrier diffusion, optical field diffraction, as well as non-homogeneities of the device geometry. The spatial rocking is realized by the periodic in-space injection function entering the laser through its left facet.