Nanofabrication Simulation as a processes research tool

Nanofabrication simulation is evolving continuously. Ever higher and faster digital computer calculating and processing power automates further the algorithms. General simulators can tackle mainstream processes. Special cases call for individualized simulation approach. Information of the physical process and initial conditions of the optical line of positive photoresist on reflective substrate is derived by using the X-ray tracing algorithm that demonstrates initial value starting surface segment widths for etch ray "launching" in the sub Angstrom region; Furthermore, ray-crossing and ray-scarce regions delineate the feed through pathways for the etchant to reach the final profile. In another case, that of exposed cluster of lines in negative resist where the developer [etchant] is heated up, by validating the experimental results via the calibrated simulator, we validate also the initial hypothesis of the physical and chemical processes that come into play such as the thermodynamics of the resist - etchant medium front that produce negative slant angle line walls.