Title :
Generation of high power (> 7W) yellow-orange radiation by frequency doubling of GaInNAs-based semiconductor disk laser
Author :
Leinonen, Tomi ; Puustinen, Janne ; Korpijärvi, Ville-Markus ; Härkönen, Antti ; Guina, Mircea ; Epstein, Ryan J.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
Abstract :
We report recent developments of GalnNAs-based semiconductor disk lasers (SDLs) emitting at around 590 nm. GalnNAs/GaAs (dilute nitride) quantum-wells enable lasing at a wavelength of -1180 nm with reduced indium content and hence reduced lattice strain as compared to InGaAs quantum wells, leading to SDL operation with output powers of more than 11W using a single gain chip, The importance of dilute nitride material system for generating high power yellow-orange radiation via frequency doubling of -1180 nm SDLs has been recently recognized.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical harmonic generation; quantum well lasers; wide band gap semiconductors; GaInNAs-GaAs; dilute nitride material system; frequency doubling; high power yellow-orange radiation generation; laser output powers; lasing wavelength; lattice strain; quantum-wells lasers; semiconductor disk laser; single gain chip; Mirrors;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5942572
