DocumentCode :
2057611
Title :
PbSe quantum well VECSEL on Si
Author :
Fill, M. ; Rahim, M. ; Khiar, A. ; Felder, F. ; Zogg, H.
Author_Institution :
Thin Film Phys. Group, ETH Zurich, Zürich, Switzerland
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
1
Abstract :
Lead-chalcogenide Vertical External Cavity Surface Emitting Lasers (VECSEL) employing PbSe, PbTe and PbSnTe as active layers have recently been described. Here we present PbSe quantum well (QW) VECSEL covering a wavelength-range from 3.3 to 5.0 μm.
Keywords :
IV-VI semiconductors; elemental semiconductors; lead compounds; quantum well lasers; silicon; surface emitting lasers; PbSe; PbSnTe; PbTe; active layers; lead-chalcogenide vertical external cavity surface emitting lasers; quantum well VECSEL; wavelength 3.3 mum to 5 mum; Lead;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
ISSN :
Pending
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
Type :
conf
DOI :
10.1109/CLEOE.2011.5942574
Filename :
5942574
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2057611
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