DocumentCode
2057734
Title
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based light emitters
Author
Hader, J. ; Moloney, J.V. ; Koch, S.W.
Author_Institution
Nonlinear Control Strategies Inc., Tucson, AZ, USA
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
1
Abstract
The droop of the internal efficiency in GaN-based light emitting devices reflects a carrier loss mechanism that has a stronger dependence on the intrinsic carrier density than the about quadratic dependence of the radiative recombinations. Here we discuss density-activated defect recombination (DADR) (Hader et al., 2010) as a possible source for this non-radiative loss at least for the low to medium density regime.
Keywords
III-V semiconductors; gallium compounds; light emitting devices; wide band gap semiconductors; GaN; carrier loss mechanism; density-activated defect recombination; efficiency droop; intrinsic carrier density; light emitters; light emitting devices; nonradiative loss; quadratic dependence; radiative recombinations;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location
Munich
ISSN
Pending
Print_ISBN
978-1-4577-0533-5
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/CLEOE.2011.5942578
Filename
5942578
Link To Document