• DocumentCode
    2057981
  • Title

    Broadband and enhanced picosecond cross-phase modulation in InGaAs /AlAsSb quantum well waveguides

  • Author

    Cong, G.W. ; Akimoto, R. ; Nagase, M. ; Mozume, T. ; Hasama, T. ; Ishikawa, H.

  • Author_Institution
    Ultrafast Photonic Devices Lab., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba
  • fYear
    2008
  • fDate
    21-25 Sept. 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Ultrafast cross-phase modulation induced by intersubband excitation was ~2-3 times enhanced when tuning probe wavelength from 1640 to 1360 nm, showing a ~300 nm broadband. Interband dispersion model explains wavelength dependence.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; optical modulation; optical waveguides; quantum well lasers; semiconductor quantum wells; InGaAs-AlAsSb; enhanced picosecond cross-phase modulation; interband dispersion model; intersubband excitation; probe wavelength tuning; quantum well waveguides; ultrafast cross-phase modulation; Absorption; Indium gallium arsenide; Optical interferometry; Optical modulation; Optical pumping; Optical saturation; Optical signal processing; Optical wavelength conversion; Probes; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication, 2008. ECOC 2008. 34th European Conference on
  • Conference_Location
    Brussels
  • Print_ISBN
    978-1-4244-2227-2
  • Electronic_ISBN
    978-1-4244-2228-9
  • Type

    conf

  • DOI
    10.1109/ECOC.2008.4729376
  • Filename
    4729376
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2057981