Title :
Broadband and enhanced picosecond cross-phase modulation in InGaAs /AlAsSb quantum well waveguides
Author :
Cong, G.W. ; Akimoto, R. ; Nagase, M. ; Mozume, T. ; Hasama, T. ; Ishikawa, H.
Author_Institution :
Ultrafast Photonic Devices Lab., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba
Abstract :
Ultrafast cross-phase modulation induced by intersubband excitation was ~2-3 times enhanced when tuning probe wavelength from 1640 to 1360 nm, showing a ~300 nm broadband. Interband dispersion model explains wavelength dependence.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; optical modulation; optical waveguides; quantum well lasers; semiconductor quantum wells; InGaAs-AlAsSb; enhanced picosecond cross-phase modulation; interband dispersion model; intersubband excitation; probe wavelength tuning; quantum well waveguides; ultrafast cross-phase modulation; Absorption; Indium gallium arsenide; Optical interferometry; Optical modulation; Optical pumping; Optical saturation; Optical signal processing; Optical wavelength conversion; Probes; Tellurium;
Conference_Titel :
Optical Communication, 2008. ECOC 2008. 34th European Conference on
Conference_Location :
Brussels
Print_ISBN :
978-1-4244-2227-2
Electronic_ISBN :
978-1-4244-2228-9
DOI :
10.1109/ECOC.2008.4729376
