DocumentCode
2057994
Title
Iddq test: sensitivity analysis of scaling
Author
Williams, T.W. ; Dennard, R.H. ; Kapur, R. ; Mercer, M.R. ; Maly, W.
Author_Institution
IBM Corp., Boulder, CO, USA
fYear
1996
fDate
20-25 Oct 1996
Firstpage
786
Lastpage
792
Abstract
While technology is changing the face of the world, it itself is changing by leaps and bounds; there is a continuing trend to put more functionality on the same piece of silicon. Without major changes in the CMOS technology, it has been shown that the scaling of devices has significant impact on the effectiveness of Iddq testing. The sensitivity of Iddq testing to individual device parameters is studied. It is explained how Iddq testing becomes increasingly ineffective in the scaled product with respect to most parameters and can be improved with others
Keywords
CMOS integrated circuits; electric current measurement; integrated circuit testing; sensitivity analysis; CMOS technology; Iddq test; Si; effectiveness; scaling; sensitivity analysis; x; CMOS technology; Doping; Geometry; Leakage current; Monitoring; Pulp manufacturing; Sensitivity analysis; Silicon; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference, 1996. Proceedings., International
Conference_Location
Washington, DC
ISSN
1089-3539
Print_ISBN
0-7803-3541-4
Type
conf
DOI
10.1109/TEST.1996.557138
Filename
557138
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