• DocumentCode
    2057994
  • Title

    Iddq test: sensitivity analysis of scaling

  • Author

    Williams, T.W. ; Dennard, R.H. ; Kapur, R. ; Mercer, M.R. ; Maly, W.

  • Author_Institution
    IBM Corp., Boulder, CO, USA
  • fYear
    1996
  • fDate
    20-25 Oct 1996
  • Firstpage
    786
  • Lastpage
    792
  • Abstract
    While technology is changing the face of the world, it itself is changing by leaps and bounds; there is a continuing trend to put more functionality on the same piece of silicon. Without major changes in the CMOS technology, it has been shown that the scaling of devices has significant impact on the effectiveness of Iddq testing. The sensitivity of Iddq testing to individual device parameters is studied. It is explained how Iddq testing becomes increasingly ineffective in the scaled product with respect to most parameters and can be improved with others
  • Keywords
    CMOS integrated circuits; electric current measurement; integrated circuit testing; sensitivity analysis; CMOS technology; Iddq test; Si; effectiveness; scaling; sensitivity analysis; x; CMOS technology; Doping; Geometry; Leakage current; Monitoring; Pulp manufacturing; Sensitivity analysis; Silicon; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Conference, 1996. Proceedings., International
  • Conference_Location
    Washington, DC
  • ISSN
    1089-3539
  • Print_ISBN
    0-7803-3541-4
  • Type

    conf

  • DOI
    10.1109/TEST.1996.557138
  • Filename
    557138