Effects of Si channel orientation on MOSFET characteristics

Author

Momose, Hisayo S. ; Yoshitomi, Sadayuki

Author_Institution

Center for Semicond. R&D, Toshiba Corp., Yokohama

fYear

2008

fDate

11-14 May 2008

Firstpage

137

Lastpage

144

Abstract

The Si channel surface orientation dependence of electrical characteristics in ultra-thin EOT gate MOSFETs was reviewed. The excellent DC and RF performance were obtained in ultra-thin SiO₂ gate p-MOSFETs with (110) oriented Si channel. The properties and electrical characteristics in n- and p- MOSFETs with 2 - 6 degree tilted off-axis (110) channel were also reported. The transconductance of p-MOSFET with off-axis channel was significantly degraded compared with that of normal channel on (110) plane, whereas that of n-MOSFET was slightly improved compared with that of normal channel. The changes were larger than those observed in slightly off-axis (100) samples. The gate leakage current and 1/f noise in (110) samples were also sensitive to off-axis angle.

Keywords

MOSFET; elemental semiconductors; leakage currents; silicon; Si; channel surface orientation; electrical characteristics; leakage current; transconductance; ultra-thin gate MOSFETs; Electric variables; Ellipsometry; Leakage current; MOSFET circuits; Microelectronics; Optical films; Oxidation; Semiconductor films; Substrates; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2008. MIEL 2008. 26th International Conference on

Conference_Location

Nis

Print_ISBN

978-1-4244-1881-7

Electronic_ISBN

978-1-4244-1882-4

Type

conf

DOI

10.1109/ICMEL.2008.4559243

Filename

4559243