Title :
Effects of Si channel orientation on MOSFET characteristics
Author :
Momose, Hisayo S. ; Yoshitomi, Sadayuki
Author_Institution :
Center for Semicond. R&D, Toshiba Corp., Yokohama
Abstract :
The Si channel surface orientation dependence of electrical characteristics in ultra-thin EOT gate MOSFETs was reviewed. The excellent DC and RF performance were obtained in ultra-thin SiO2 gate p-MOSFETs with (110) oriented Si channel. The properties and electrical characteristics in n- and p- MOSFETs with 2 - 6 degree tilted off-axis (110) channel were also reported. The transconductance of p-MOSFET with off-axis channel was significantly degraded compared with that of normal channel on (110) plane, whereas that of n-MOSFET was slightly improved compared with that of normal channel. The changes were larger than those observed in slightly off-axis (100) samples. The gate leakage current and 1/f noise in (110) samples were also sensitive to off-axis angle.
Keywords :
MOSFET; elemental semiconductors; leakage currents; silicon; Si; channel surface orientation; electrical characteristics; leakage current; transconductance; ultra-thin gate MOSFETs; Electric variables; Ellipsometry; Leakage current; MOSFET circuits; Microelectronics; Optical films; Oxidation; Semiconductor films; Substrates; Thickness measurement;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559243
