DocumentCode :
20581
Title :
An Electromigration Failure Distribution Model for Short-Length Conductors Incorporating Passive Sinks/Reservoirs
Author :
Lin, M.H. ; Oates, Anthony S.
Author_Institution :
Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan
Volume :
13
Issue :
1
fYear :
2013
fDate :
Mar-13
Firstpage :
322
Lastpage :
326
Abstract :
The effects of passive (inactive) sinks and reservoirs on electromigration failure distributions close to critical current density jc are examined. We develop a model to accurately predict failure distributions where the inactive segment modifies the void nucleation component of jc. We show that failure distributions can exhibit large deviations of median time to fail in the presence of sinks and reservoirs, but at low percentiles typical of reliability requirements, failure time modifications are much reduced.
Keywords :
critical current density (superconductivity); electromigration; integrated circuit modelling; critical current density; electromigration failure distribution model; failure distributions; passive sinks/reservoirs; short-length conductors; Conductors; Current density; Electromigration; Metals; Reliability; Reservoirs; Stress; Backflow; Blech length; Cu/low-k; electromigration; failure distribution; reliability; reservoir; sink;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2012.2233201
Filename :
6416034
Link To Document :
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