Title :
Electrostatics and diffusion-drift transport in graphene field effect transistors
Author_Institution :
Dept. of Microelectron., Moscow Eng. Phys. Inst., Moscow
Abstract :
It is found that electrostatics of gated graphene field effect structures has peculiar features in comparison to silicon MOSFET. Diffusion-drift model of I-V characteristics in graphene transistors is derived and discussed.
Keywords :
MOSFET; diffusion; electrostatic devices; elemental semiconductors; silicon; MOSFET; Si; diffusion-drift transport; electrostatics; gated graphene field effect structures; graphene field effect transistors; Charge carrier processes; Chemicals; Doping; Electrostatics; FETs; Kinetic energy; MOSFET circuits; Microelectronics; Silicon; Voltage;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559247
