DocumentCode :
2058335
Title :
Regenerative wavelength conversion based on semiconductor devices
Author :
Huo, Li ; Zhang, Enyao ; Lou, Caiyun
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear :
2012
fDate :
19-21 April 2012
Firstpage :
11
Lastpage :
13
Abstract :
We reviewed our on-going effects in regenerative wavelength conversions. 40-Gb/s 3R-regeneratiave wavelength conversion was realized with EAM or SOA-DI as the decision gate. 100-Gb/s 2R-regenerative wavelength conversion was implemented by utilizing cross gain compression effect in SOA.
Keywords :
optical wavelength conversion; semiconductor optical amplifiers; 3R-regeneratiave wavelength conversion; EAM; SOA-DI; bit rate 100 Gbit/s; bit rate 40 Gbit/s; cross gain compression effect utilization; decision gate; semiconductor devices; semiconductor optical amplifier; Adaptive optics; Fiber optics; Optical filters; Optical polarization; Optical pulses; Optical wavelength conversion; Repeaters; EAM; SOA; regeneration; wavelength conversion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless and Optical Communications Conference (WOCC), 2012 21st Annual
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-0940-0
Type :
conf
DOI :
10.1109/WOCC.2012.6198162
Filename :
6198162
Link To Document :
بازگشت