DocumentCode
2058409
Title
Analytical model of a Si TFT with cylindrical source and drain
Author
Ramovic, R.M. ; Lukic, P.M. ; Sasic, R.M. ; Ostojic, S.M.
Author_Institution
Dept. of Microelectron., Univ. of Belgrade, Belgrade
fYear
2008
fDate
11-14 May 2008
Firstpage
193
Lastpage
196
Abstract
In this paper a new analytical model of a silicon thin film transistor (Si TFT) with cylindrical source and drain, is presented. In first part of the text, some basic TFT characteristics and possible applications are exposed. Analytical model is developed starting from Poisson´s equation, and current density dependence on electric field and voltage. Development of conductivity model follows and finally current-voltage characteristics model. Improvement of the I-V characteristics model is achieved by developing carrier mobility model which is incorporate in it.
Keywords
Poisson equation; elemental semiconductors; silicon; thin film transistors; Poisson equation; Si; TFT; conductivity model; current density dependence; current-voltage characteristics model; cylindrical drain; cylindrical source; silicon thin film transistor; Analytical models; CMOS technology; Displays; Glass; MOSFETs; Plastics; Semiconductivity; Silicon; Substrates; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location
Nis
Print_ISBN
978-1-4244-1881-7
Electronic_ISBN
978-1-4244-1882-4
Type
conf
DOI
10.1109/ICMEL.2008.4559256
Filename
4559256
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