DocumentCode
2058536
Title
Comprehensive Electro-Thermal Compact Model of a 3.3kV-1200A IGBT-module
Author
Castellazzi, Alberto ; Ciappa, Mauro ; Fichtner, Wolfgang ; Lourdel, Guillaume ; Mermet-Guyennet, Michel
Author_Institution
Integrated Systems Laboratory, Swiss Federal Institute of Technology, Zurich, Switzerland. E-mail: castellazzi@iis.ee.ethz.ch
fYear
2007
fDate
12-14 April 2007
Firstpage
405
Lastpage
410
Abstract
This paper proposes the development of a complete compact model of an IGBT-module, for use in a circuit simulation environment. The model includes all major electro-thermal effects and such features as the self-heating of the silicon dies and package related parasitic effects. An accurate selection of simulation examples, derived from a railway traction application scenario, demonstrates the validity and the versatility of the proposed solution.
Keywords
Assembly; Circuit simulation; Insulated gate bipolar transistors; Inverters; P-i-n diodes; Packaging; Power system modeling; Rail transportation; Semiconductor diodes; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Engineering, Energy and Electrical Drives, 2007. POWERENG 2007. International Conference on
Conference_Location
Setubal, Portugal
Print_ISBN
978-1-4244-0895-5
Electronic_ISBN
978-1-4244-0895-5
Type
conf
DOI
10.1109/POWERENG.2007.4380225
Filename
4380225
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