DocumentCode :
2058608
Title :
Passively mode-locked semiconductor laser for coherent population trapping in 87Rb
Author :
Tandoi, G. ; Seunarine, K. ; Ironside, C.N. ; Bryce, C.A. ; McDougall, S.D. ; Meredith, W. ; Luiten, A.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
1
Abstract :
Passively mode-locked semiconductor laser for coherent population trapping in 87Rb is reported. The laser material used is a 793nm GaAs/AlxGa1-xAs single quantum well (QW) graded index separate confinement heterostructure.
Keywords :
III-V semiconductors; aluminium compounds; atom-photon collisions; gallium arsenide; laser mode locking; multiphoton processes; quantum well lasers; radiation pressure; rubidium; GaAs-AlxGa1-xAs; Rb; coherent population trapping; graded-index separate confinement heterostructure; laser material; passively mode-locked semiconductor laser; quantum wells; wavelength 793 nm;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
ISSN :
Pending
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
Type :
conf
DOI :
10.1109/CLEOE.2011.5942610
Filename :
5942610
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2058608
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