Modeling of nanoscale GaN FET in a compact 2-D model with gate stack effects

We report a compact 2D model for AlGaN/GaN HEMT with different gate stack configurations. A two dimensional analysis is done which also includes the various polarization effects. The output characteristics, device transconductance and cut-off frequency (f_T) for 120 nm gate length device are obtained. Peak transconductance of 320 mS/mm and a cut-off frequency (f_T) of 120 GHz has been obtained. It is also demonstrated that the gate metal pattern largely affect the device characteristics and the small signal parameters. The results show excellent agreement when compared with experimental data thereby proving the validity of the model.