Title :
A quasi-complementary-logic GaAs gate array employing air-bridge metallization technology
Author :
Higashisaka, Norio ; Shimada, Masaaki ; Nishimura, Takashi ; Sasaki, Nagisa ; Noda, Minoru ; Matsuoka, Hiroshi ; Kayano, Shinpei
Author_Institution :
Mitsubishi Electric Corp., Hyogo, Japan
Abstract :
A GaAs logic circuit called QCL (quasi-complementary-logic) and a gate array employing air-bridge metallization are proposed. QCL has advantages over DCFL in delay, in power dissipation, and especially in function. Air-bridge metallization can cut 40% of the wiring delay. It is possible to design an array of more than 30 K gates using the process technology that is currently available
Keywords :
III-V semiconductors; VLSI; field effect integrated circuits; gallium arsenide; logic arrays; metallisation; GaAs logic circuit; air-bridge metallization technology; delay time; functionality; gate array; power dissipation; process technology; quasi-complementary-logic; semiconductors; wiring delay; Circuit noise; Delay; Gallium arsenide; Large scale integration; Logic circuits; Metallization; Power dissipation; Quantum cascade lasers; Research and development; Tin;
Conference_Titel :
Custom Integrated Circuits Conference, 1991., Proceedings of the IEEE 1991
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0015-7
DOI :
10.1109/CICC.1991.163992
