Title :
Influence of multiple interfaces on oxygen ionic conductivity in gadolinia-doped single crystal oxide electrolyte multi-layer nano films
Author :
Thevuthasan, S. ; Azad, S. ; Marina, O.A. ; Shutthanandan, V. ; McCready, D.E. ; Saraf, L. ; Wang, C.M. ; Lyubinetsky, I. ; Peden, C.H.F. ; Petrovsky, V.
Author_Institution :
Pacific Northwest Nat. Lab., Richland, WA, USA
Abstract :
Single-crystal multi-layered thin films of pure and gadolinia-doped ceria and zirconia were heteroepitaxially grown on sapphire (0001) substrates using molecular beam epitaxy. The growth of these films was monitored using in-situ reflection high-energy electron diffraction (RHEED). In addition, the ex-situ characterization techniques including X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) along with ion channeling were used to further characterize these films. The electrical conductivity in these films was measured using a four-probe van der Pauw technique. Oxygen ionic conductivity at low temperatures appeared to be higher in the four-layer film compared to two-layer film.
Keywords :
Rutherford backscattering; X-ray diffraction; cerium compounds; gadolinium compounds; ionic conductivity; molecular beam epitaxial growth; multilayers; nanotechnology; reflection high energy electron diffraction; thin films; zirconium compounds; (0001) sapphire substrates; Al2O3; CeO2:Gd2O3; RBS; RHEED; Rutherford backscattering spectra; X-ray diffraction; XRD; ZrO2:Gd2O3; electrical conductivity; four probe van der Pauw technique; gadolinia doped ceria; gadolinia doped zirconia; heteroepitaxial growth; ion channeling; molecular beam epitaxy; multiple interfaces; oxygen ionic conductivity; reflection high-energy electron diffraction; single crystal multi layered thin films; Conductive films; Conductivity; Electrons; Molecular beam epitaxial growth; Monitoring; Optical films; Optical reflection; Substrates; Transistors; X-ray diffraction;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1230969
