Title :
Surface recristallization of CdS layers by pulsed - laser annealing
Author :
Shindov, P. ; Kakanakov, R. ; Kolaklieva, L. ; Kaneva, Sv ; Anastasova, T.
Author_Institution :
Dept. of Electron., Tech. Univ. - Sofia, Plovdiv
Abstract :
Properties of spry pyrolysed CdS layers were changed purposefully using annealing by a pulsed-laser in oxygen ambient. The structural, phase and electrical characteristics before and after annealing have been compared. The layer surface has been studied by SEM, XRD and XPS analyses. The electrical and optic parameters have been measured as well. Layers with different structure and electro-optical characteristics have been obtained by changing the conditions of the subsequent treatment. The pulsed-laser annealing in the oxygen ambient leaded to partial oxidation of the polycrystalline layers and forming a photosensitive CdS - CdO structure. A correlation between the technological condition and the layer parameters has been found.
Keywords :
II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; cadmium compounds; electro-optical effects; laser beam annealing; recrystallisation; scanning electron microscopy; semiconductor thin films; surface composition; wide band gap semiconductors; CdS; SEM; XPS; XRD; electro optical effects; pulsed-laser annealing; surface composition; surface recrystallization; surface structure; Annealing; Laser transitions; Optical films; Optical pulses; Pulsed laser deposition; Scanning electron microscopy; Surface emitting lasers; Surface morphology; Surface treatment; X-ray scattering;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559269
