DocumentCode :
2058800
Title :
High performance single-mode 1060 nm DFB laser diodes
Author :
Zibik, E.A. ; Boucart, J. ; Thies, A. ; Davies, I. ; Button, C. ; Lichtenstein, N.
Author_Institution :
Oclaro (Switzerland) AG, Zürich, Switzerland
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
1
Abstract :
Narrow band wavelength stabilized single-mode lasers operating at around 1060 nm and producing high power are required as a light source for MOPA fiber laser systems. However since stimulated Brillouin scattering is a power limiting factor for fiber lasers, seed lasers capable of ultrafast gain switching (<;1 ns) are desired. Distributed feedback (DFB) lasers can satisfy all those requirements at once. Within the framework of FP7 EU-ALPINE project, we developed high power first order DFB laser emitting at around 1060 nm and providing >;700 mW of linear power in CW and >;1W of peak power in pulse mode.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; fibre lasers; gallium compounds; indium compounds; laser modes; semiconductor lasers; FP7 EU-ALPINE project; InGa(Al)As; MOPA fiber laser systems; distributed feedback lasers; high performance single-mode DFB laser diodes; high power first order DFB laser; light source; narrow band wavelength stabilized single-mode lasers; power limiting factor; pulse mode; seed lasers; stimulated Brillouin scattering; ultrafast gain switching; wavelength 1060 nm; Lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
ISSN :
Pending
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
Type :
conf
DOI :
10.1109/CLEOE.2011.5942618
Filename :
5942618
Link To Document :
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