Title :
Transistor with electrically induced quantum wire channel
Author :
Baik, Seung Jae ; Choi, Siyoung ; Chung, U-In ; Moon, Joo Tae
Author_Institution :
Process Dev. Team, Samsung Electron. Co. Ltd, Yongin, South Korea
Abstract :
Quantum wire was electrically realized using conventional Si process technology. Channel lateral junction and gate bias induced surface band bending resulted in potential well. MOSFET with hole channel of this wire-like potential exhibited conductance oscillation, which was explained by subbands formation in the twin well at the lateral junction. Potential confinement in two dimensions also caused high photo-sensitivity in this device.
Keywords :
MOSFET; semiconductor device models; semiconductor quantum wires; sensitivity; MOSFET; channel lateral junction; conductance oscillation; electrically induced quantum wire channel; gate bias induced surface band bending; hole channel; photosensitivity; potential confinement; potential well; subbands formation; transistor; Doping; Fluctuations; Lithography; MOSFETs; Nanocrystals; Nonvolatile memory; Potential well; Temperature; Transistors; Wire;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1230973
