Title :
Vertical 40 nm Impact Ionization MOSFET (I-MOS) for high temperature applications
Author :
Abelein, U. ; Assmuth, A. ; Iskra, P. ; Reinl, M. ; Schlosser, M. ; Sulima, T. ; Eisele, I.
Author_Institution :
Inst. of Phys., Univ. der Bundeswehr Munich, Neubiberg
Abstract :
For the first time we present high temperature electrical characteristics of the vertical Impact Ionization MOSFET. The design of this device suppresses efficiently leakage currents at high temperatures and therefore guarantees MOSFET functionality up to several hundred degC. At 250degC a very good IonToff ratio of 105 as well as leakage currents in the nA range are demonstrated. This makes this device suitable for high temperature applications like automotive.
Keywords :
MOSFET; high-temperature electronics; impact ionisation; leakage currents; Ion/Ioff ratio; high temperature applications; high temperature electrical characteristics; leakage currents; vertical impact ionization MOSFET; Doping; Electrons; Impact ionization; Leakage current; MOSFET circuits; Microelectronics; Silicon; Temperature; Tunneling; Voltage;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559280
