Title :
SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion
Author :
Lorito, G. ; Gonda, V. ; Scholtes, T.L.M. ; Nanver, L.K.
Author_Institution :
Dept. of Microelectron., Delft Univ. of Technol., Delft
Abstract :
In this work we present a novel self-aligned emitter-base structure featuring an implanted and laser-annealed emitter region. Using electrical measurements on SiGe NPN HBTs, it is shown that such a process completely eliminates the TED-induced out-diffusion of the boron in the base region while also achieving an ultra-shallow abrupt emitter-base junction and very low emitter contact resistance.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; laser beam annealing; silicon compounds; SiGe; SiGe HBT; emitter contact resistance; laser- annealed emitters; transient enhanced diffusion; Annealing; Boron; CMOS technology; Contact resistance; Doping; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Silicon germanium;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559281
