DocumentCode :
2059047
Title :
Low temperature development of PMMA for sub-10-nm electron beam lithography
Author :
Hu, Wenchuang ; Bernstein, Gary H. ; Sarveswaran, Koshala ; Lieberman, And Marya
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Volume :
2
fYear :
2003
fDate :
12-14 Aug. 2003
Firstpage :
602
Abstract :
We investigate PMMA development at lowered temperatures for its effect on the resolution, PMMA trench cleanliness and pattern quality of sub-10 nm e-beam lithography. We find that low temperature development (4∼10 deg. C) results in reproducibly 4∼8 nm PMMA trenches and fabrication of single-particle-width Au nano-particle lines by liftoff. We discuss development temperature and other key factors for formation of better quality PMMA trenches at the sub-10 nm scale.
Keywords :
electron beam lithography; gold; nanoparticles; polymers; 10 nm; 4 to 10 degC; 4 to 8 nm; Au; Au nanoparticle; PMMA fabrication; PMMA trench cleanliness; electron beam lithography; pattern quality; single particle width; Atomic force microscopy; Electron beams; Fabrication; Gold; Lithography; Quantum cellular automata; Resists; Scanning electron microscopy; Shape; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
Type :
conf
DOI :
10.1109/NANO.2003.1230983
Filename :
1230983
Link To Document :
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