Spectral characterisation of VCSELs emitting at 894.6 nm for CPT-based miniature atomic clocks

Author

Gruet, F. ; Bimboes, L. ; Miletic, D. ; Affolderbach, C. ; Mileti, G. ; Al-Samaneh, A. ; Wahl, D. ; Michalzik, R.

Author_Institution

Lab. Temps-Frequence, Univ. de Neuchatel, Neuchatel, Switzerland

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

We present the spectral characterisation of newly developed VCSEL (Vertical-Cavity Surface-Emitting Laser) diodes emitting around 894 nm, in view of their future use in miniature Caesium gas-cell atomic clocks based on Coherent Population Trapping (CPT). The VCSELs are based on the mature AlGaAs material system epitaxially grown on n-type GaAs substrates. The target wavelength has been reached by applying strained InGaAs quantum wells as active material.

Keywords

III-V semiconductors; aluminium compounds; atomic clocks; epitaxial growth; gallium arsenide; integrated optics; laser cavity resonators; laser modes; quantum well lasers; surface emitting lasers; GaAs; InGaAs; VCSEL; active material; coherent population trapping; epitaxial growth; miniature caesium gas-cell atomic clocks; n-type GaAs substrates; spectral characterisation; strained quantum wells; vertical-cavity surface-emitting laser; wavelength 894.6 nm;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5942636

Filename

5942636