DocumentCode :
2059354
Title :
Fast absorption recovery and wavelength conversion in 1.5mm AlInGaAs MQW lasers
Author :
Green, Richard ; Haji, Mohsin ; Hou, Lianping ; Mezosi, Gabor ; Dylewicz, Rafal ; Kelly, Tony
Author_Institution :
Dept. of Phys., Univ. Coll. Cork, Cork, Ireland
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
1
Abstract :
In this work we present experimental evidence for values of τα below 5ps in reverse biased AlInGaAs mul tiple quantum wells (MQWs) designed to emit at λ ~ 1.5μm. This materials system is widely used for 1.5μm semiconductor lasers due to its superior performance at high temperatures when compared to equivalent structures using InGaAsP. This effect is observed within the gain peak of the material when forward biased, and so presents an ideal system for the integration of gain elements with fast saturable absorbers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical saturable absorption; optical wavelength conversion; quantum well lasers; AlInGaAs; fast absorption recovery; gain elements; multiple quantum well lasers; saturable absorbers; semiconductor lasers; wavelength 1.5 mum; wavelength conversion; Materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
ISSN :
Pending
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
Type :
conf
DOI :
10.1109/CLEOE.2011.5942639
Filename :
5942639
Link To Document :
بازگشت