Fast absorption recovery and wavelength conversion in 1.5mm AlInGaAs MQW lasers

Author

Green, Richard ; Haji, Mohsin ; Hou, Lianping ; Mezosi, Gabor ; Dylewicz, Rafal ; Kelly, Tony

Author_Institution

Dept. of Phys., Univ. Coll. Cork, Cork, Ireland

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

In this work we present experimental evidence for values of τ_α below 5ps in reverse biased AlInGaAs mul tiple quantum wells (MQWs) designed to emit at λ ~ 1.5μm. This materials system is widely used for 1.5μm semiconductor lasers due to its superior performance at high temperatures when compared to equivalent structures using InGaAsP. This effect is observed within the gain peak of the material when forward biased, and so presents an ideal system for the integration of gain elements with fast saturable absorbers.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical saturable absorption; optical wavelength conversion; quantum well lasers; AlInGaAs; fast absorption recovery; gain elements; multiple quantum well lasers; saturable absorbers; semiconductor lasers; wavelength 1.5 mum; wavelength conversion; Materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5942639

Filename

5942639