Character of non-stoichiometric InP bulk crystal

P-rich, In-rich and stoichiometric undoped InP melts have been synthesized by phosphorus in-situ injection method, InP crystal ingots have been grown from these melts by LEC method. The difference in these InP crystal should be attributed to the change of stoichiometry. Some samples from these ingots have been characterized by the Hall effect and Fourier transform infrared (FT-IR) spectroscopy measurements respectively. The Hall effect measurement results indicate that the carrier concentration of P-rich undoped InP is higher than that of In-rich and stoichiometric undoped InP materials. The intensive absorption peaks indicate that our phosphorus in-situ injection synthesis LEC undoped InP materials have relatively high concentration of hydrogen related complexes. The FT-IR results are also in agreement with the carrier concentration of InP grown from different stoichiometric melts.