Homogeneity study of wafers of InP single crystal grown from P-rich melt

Author

Zhou, Xiaolong ; Mao, Luhong ; Sun, Niefeng ; Guo, Weilian ; Wu, Xiawan ; Fu, Jiande ; Yao, Zhihong ; Zhao, Yanjun ; Yang, Kewu ; Sun, Tongnian

Author_Institution

Nat. Key Lab. of ASIC, Hebei Semicond. Res. Inst., China

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

23

Lastpage

26

Abstract

A 4-inch InP single crystal has been grown from P-rich melt by the P-injection synthesis LEC method. Due to the non-stoichiometric condition, there are many pores in the tail of the ingot. The wafers cut from it are experimented by means of PL mapping and EPD mapping. The PL peak intensity standard deviation of the 4-inch InP wafer is higher. The EPDs around the pores are larger than the other regions. Besides the stress releasing, the pores and the high concentration of dislocations around them presents the leading factors causing the inhomogeneity of the wafer. We have explained the phenomena.

Keywords

III-V semiconductors; crystal growth from melt; defect absorption spectra; dislocation density; indium compounds; ingots; photoluminescence; porous semiconductors; semiconductor growth; stoichiometry; EPD mapping; InP; InP single crystals; PL mapping; dislocations; homogeneity; ingot; injection synthesis LEC method; pores; stress release; wafers; Application specific integrated circuits; Crystalline materials; Crystals; Indium phosphide; Optical devices; Optical materials; Photoluminescence; Stress; Substrates; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511377

Filename

1511377