Deep centers in conductive and semi-insulating GaN

Author

Fang, Zhaoqiang ; Farlow, Gary ; Claflin, Bruce ; Look, David

Author_Institution

Semicond. Res. Center, Wright State Univ., Dayton, OH, USA

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

29

Lastpage

36

Abstract

Unintentionally doped conductive and carbon doped semi-insulating GaN films have been characterized by deep level transient spectroscopy, thermally stimulated current spectroscopy, and photoluminescence (PL). Based on correlations with dislocation density, point defects created by electron irradiation, and deep PL bands, the major traps in GaN can be tentatively associated with N vacancies, Ga vacancies, and N interstitials.

Keywords

III-V semiconductors; carbon; deep level transient spectroscopy; dislocation density; gallium compounds; impurity absorption spectra; interstitials; photoluminescence; semiconductor doping; semiconductor thin films; thermally stimulated currents; vacancies (crystal); wide band gap semiconductors; GaN:C; carbon; conductive semi insulating GaN films; deep centers; deep level transient spectroscopy; dislocation density; electron irradiation; interstitials; photoluminescence; point defects; thermally stimulated current spectroscopy; traps; unintentionally doped; vacancies; Conductive films; Electron traps; Epitaxial growth; Gallium nitride; MOCVD; Molecular beam epitaxial growth; Photoluminescence; Semiconductor films; Spectroscopy; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511379

Filename

1511379