Title :
Deep centers in conductive and semi-insulating GaN
Author :
Fang, Zhaoqiang ; Farlow, Gary ; Claflin, Bruce ; Look, David
Author_Institution :
Semicond. Res. Center, Wright State Univ., Dayton, OH, USA
Abstract :
Unintentionally doped conductive and carbon doped semi-insulating GaN films have been characterized by deep level transient spectroscopy, thermally stimulated current spectroscopy, and photoluminescence (PL). Based on correlations with dislocation density, point defects created by electron irradiation, and deep PL bands, the major traps in GaN can be tentatively associated with N vacancies, Ga vacancies, and N interstitials.
Keywords :
III-V semiconductors; carbon; deep level transient spectroscopy; dislocation density; gallium compounds; impurity absorption spectra; interstitials; photoluminescence; semiconductor doping; semiconductor thin films; thermally stimulated currents; vacancies (crystal); wide band gap semiconductors; GaN:C; carbon; conductive semi insulating GaN films; deep centers; deep level transient spectroscopy; dislocation density; electron irradiation; interstitials; photoluminescence; point defects; thermally stimulated current spectroscopy; traps; unintentionally doped; vacancies; Conductive films; Electron traps; Epitaxial growth; Gallium nitride; MOCVD; Molecular beam epitaxial growth; Photoluminescence; Semiconductor films; Spectroscopy; Thermal conductivity;
Conference_Titel :
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN :
0-7803-8668-X
DOI :
10.1109/SIM.2005.1511379
